US Patent Issued to Waseda University on Oct. 28 for "Diamond field effect transistor and method for producing same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,760, issued on Oct. 28, was assigned to Waseda University (Tokyo).

"Diamond field effect transistor and method for producing same" was invented by Hiroshi Kawarada (Tokyo), Wenxi Fei (Tokyo), Te Bi (Tokyo) and Masayuki Iwataki (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a diamond field effect transistor using a silicon oxide film as a gate insulating film including a silicon-terminated layer containing C-Si bonds in order to reduce an interface state density, and a method for producing the same. A FET 100A includes a silicon oxide film 3A formed on a surface of a non-doped diamond layer 2A, a non-doped diamond layer 4A formed ...