US Patent Issued to W&Wram Devices on Oct. 14 for "Resistive random-access memory using stacked technology" (California Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,236, issued on Oct. 14, was assigned to W&Wram Devices Inc. (Los Altos, Calif.).

"Resistive random-access memory using stacked technology" was invented by Shih-Yuan Wang (Palo Alto, Calif.) and Shih-Ping Wang (Los Altos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described in combination with stacked technology with CMOS ASIC wafters. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. Stacking technology can be used to address incompatibility of ReRAM proce...