ALEXANDRIA, Va., April 9 -- United States Patent no. 12,269,747, issued on April 8, was assigned to Wacker Chemie AG (Munich).
"Method for producing polycrystalline silicon" was invented by Markus Wenzeis (Wurmannsquick, Germany), Piotr Filar (Marktl, Germany) and Thomas Schrock (Kastl, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for producing polycrystalline silicon includes introducing a reaction gas, which in addition to hydrogen contains silane and/or at least one halosilane, into a reaction space of a gas phase deposition reactor. The reaction space includes at least one heated filament rod upon which by deposition silicon is deposited to form a polycrystalline silicon rod. During th...