ALEXANDRIA, Va., June 17 -- United States Patent no. 12,316,076, issued on May 27, was assigned to VISUAL PHOTONICS EPITAXY Co. LTD. (Taoyuan, Taiwan).
"Vertical cavity surface emitting laser diode (VCSEL) with tunnel junction" was invented by Chao-Hsing Huang (Taoyuan, Taiwan), Yu-Chung Chin (Taoyuan, Taiwan) and Van-Truong Dai (Vinhphuc province, Viet Nam).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a vertical cavity surface emitting laser diode (VCSEL). A tunnel junction with a high doping concentration is provided in the VCSEL. An n-type semiconductor layer of the tunnel junction has stress relative to the substrate, and is doped with at least one element such that the tunnel junction not o...