ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,567, issued on Jan. 20, was assigned to VISUAL PHOTONICS EPITAXY Co. LTD. (Taoyuan, Taiwan).
"Semiconductor component having defect barrier region" was invented by Van-Truong Dai (Taoyuan, Taiwan), Yu-Chung Chin (Taoyuan, Taiwan) and Chao-Hsing Huang (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention is a semiconductor device having a defect blocking region. The semiconductor device includes a substrate, a defect source region, a semiconductor layer and a defect blocking region. The defect source region is on the substrate, wherein the defect source region is a metamorphic buffer layer or a buffer layer, the semico...