US Patent Issued to VIRGINIA TECH INTELLECTUAL PROPERTIES on Oct. 7 for "Monolithic cascode multi-channel high electron mobility transistors" (Virginia Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,629, issued on Oct. 7, was assigned to VIRGINIA TECH INTELLECTUAL PROPERTIES INC. (Blacksburg, Va.).

"Monolithic cascode multi-channel high electron mobility transistors" was invented by Yuhao Zhang (Blacksburg, Va.) and Ming Xiao (Blacksburg, Va.).

According to the abstract* released by the U.S. Patent & Trademark Office: "This disclosure provides semiconductor device including a first transistor with a first gate terminal, a first source terminal, and the first drain terminal, the first transistor being a depletion mode transistor and including a plurality of two-dimensional carrier channels of a conductivity type being one of a n-type or a p-type conductivity. The semiconductor...