ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,410,202, issued on Sept. 9, was assigned to Versum Materials US LLC (Tempe, Ariz.).
"Group V and VI transition metal precursors for thin film deposition" was invented by Guocan Li (Tempe, Ariz.), Sergei V. Ivanov (Tempe, Ariz.), Xinjian Lei (Tempe, Ariz.) and Hongbo Li (Tempe, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein are Group V and VI compounds used as precursors for depositing Group V and VI-containing films. Ligands with alkyl, amide, imide, amidinate groups and/or cyclopentadienyl (Cp) ligands are used to form Group V and VI complexes used as precursors. Examples of Group V and VI precursor compounds include, but are no...