US Patent Issued to Versum Materials US on Sept. 23 for "Composition for high temperature atomic layer deposition of high quality silicon oxide thin films" (California, Arizona Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,421,603, issued on Sept. 23, was assigned to Versum Materials US LLC (Tempe, Ariz.).

"Composition for high temperature atomic layer deposition of high quality silicon oxide thin films" was invented by Meiliang Wang (Tempe, Ariz.), Xinjian Lei (Vista, Calif.) and Madhukar B. Rao (Carlsbad, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Atomic layer deposition (ALD) process formation of silicon oxide with temperature less than600deg C. is disclosed. Silicon precursors used have a formula of: I.R1R2mSi(NR3R4)n wherein R1, R2, and R3 are each independently selected from a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; R4 is se...