ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,441,747, issued on Oct. 14, was assigned to Versum Materials US LLC (Tempe, Ariz.).
"Silicon compounds and methods for depositing films using same" was invented by Manchao Xiao (San Diego), Raymond N. Vrtis (Carefree, Ariz.), Robert Gordon Ridgeway (Chandler, Ariz.), William R. Entley (Gilbert, Ariz.), Jennifer Lynn Anne Achtyl (Chandler, Ariz.), Xinjian Lei (Vista, Calif.) and Daniel P. Spence (Carlsbad, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a subst...