US Patent Issued to Versum Materials US on May 13 for "High temperature atomic layer deposition of silicon-containing film" (Chinese, American Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,297,115, issued on May 13, was assigned to Versum Materials US LLC (Tempe, Ariz.).

"High temperature atomic layer deposition of silicon-containing film" was invented by Meiliang Wang (Shanghai) and Xinjian Lei (Vista, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600deg C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600deg C. to 1000deg C.; comprising the steps of: introducing i...