ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,533,709, issued on Jan. 27, was assigned to Versum Materials US LLC (Tempe, Ariz.).
"Silacyclic compounds and methods for depositing silicon-containing films using same" was invented by Xinjian Lei (Vista, Calif.), Robert Gordon Ridgeway (Chandler, Ariz.) and Raymond Nicholas Vrtis (Carlsbad, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method and composition for producing a porous low k dielectric film via chemical vapor deposition includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an silacyclic compound, ...