US Patent Issued to Versum Materials US on April 22 for "Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,251, issued on April 22, was assigned to Versum Materials US LLC (Tempe, Ariz.).

"Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device" was invented by Jhih Kuei Ge (New Taipei, Taiwan), Yi-Chia Lee (Chupei, Taiwan), Wen Dar Liu (Chupei, Taiwan), Aiping Wu (Chandler, Ariz.) and Laisheng Sun (Gilbert, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etchin...