US Patent Issued to VERISILICON MICROELECTRONICS (CHENGDU), VERISILICON MICROELECTRONICS (SHANGHAI), VERISILICON MICROELECTRONICS (NANJING), VERISILICON MICROELECTRONICS (BEIJING) on June 17 for "Memory configuration method, apparatus, electronic device, and storage medium" (Chinese Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,333,192, issued on June 17, was assigned to VERISILICON MICROELECTRONICS (CHENGDU) Co. LTD. (Sichuan, China), VERISILICON MICROELECTRONICS (SHANGHAI) Co. LTD. (Shanghai), VERISILICON MICROELECTRONICS (NANJING) Co. LTD. (Jiangsu, China) and VERISILICON MICROELECTRONICS (BEIJING) Co. LTD. (Beijing).

"Memory configuration method, apparatus, electronic device, and storage medium" was invented by Zheng Zhao (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory configuration method, apparatus, electronic device, and storage medium. The memory configuration method includes: obtaining virtual memory by dividing a solid-state storage ha...