US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Sept. 16 for "Electrostatic discharge protection circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,115, issued on Sept. 16, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Electrostatic discharge protection circuit" was invented by Shao-Chang Huang (Hsinchu, Taiwan), Kai-Chieh Hsu (Taoyuan, Taiwan), Chi-Hung Lo (Zhudong Township, Taiwan), Wei-Sung Chen (Zhubei, Taiwan), Chieh-Yao Chuang (Kaohsiung, Taiwan), Hsien-Feng Liao (Taichung, Taiwan) and Yeh-Ning Jou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ESD protection circuit includes a buffer circuit, a driving circuit, and a power-clamping circuit. The buffer circuit includes first and second transistors having a first conductivity type coupl...