US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Oct. 14 for "Electrostatic discharge protection circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,935, issued on Oct. 14, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Electrostatic discharge protection circuit" was invented by Chih-Hsuan Lin (Hsinchu, Taiwan), Shao-Chang Huang (Hsinchu, Taiwan), Yeh-Ning Jou (Hsinchu, Taiwan), Chieh-Yao Chuang (Kaohsiung, Taiwan), Hwa-Chyi Chiou (Hsinchu, Taiwan), Wen-Hsin Lin (Hsinchu County, Taiwan), Kai-Chieh Hsu (Taoyuan, Taiwan), Ting-Yu Chang (Hsinchu County, Taiwan) and Hsien-Feng Liao (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ESD protection circuit is coupled to a first pad and includes an ESD detection circuit, a P-type transistor, an N-type tr...