ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,525, issued on Nov. 18, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor device and fabrication method thereof" was invented by Ming-Cheng Lo (New Taipei, Taiwan), Shih-Chang Huang (Hsinchu, Taiwan), Jui-Chun Chang (Hsinchu, Taiwan), Wu-Hsi Lu (Hsinchu, Taiwan), Yu-Che Tsai (Hsinchu, Taiwan), Shih-Hao Liu (Taoyuan, Taiwan) and Yen-Shih Ho (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes providing a substrate that includes a handle substrate, a bottom cladding layer, and a semiconductor layer stacked in sequence from bottom to top. The s...