US Patent Issued to Vanguard International Semiconductor on May 20 for "Semiconductor device including high electron mobility transistors with an improved backside electrode being applied in a half-bridge circuit" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,105, issued on May 20, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor device including high electron mobility transistors with an improved backside electrode being applied in a half-bridge circuit" was invented by Walter Wohlmuth (Taipei, Taiwan), Shin-Cheng Lin (Hsinchu County, Taiwan) and Chia-Ching Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating layer, a semiconductor layer, and a compound semiconductor stacked layer disposed on a substrate in sequence, a first transistor, a second transistor, an isolation structure, and a conductive ...