US Patent Issued to Vanguard International Semiconductor on June 17 for "Semiconductor device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,276, issued on June 17, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor device and fabrication method thereof" was invented by Shin-Cheng Lin (Hsinchu County, Taiwan) and Chia-Ching Huang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having an active element region and a passive element region. A compound semiconductor channel layer, a compound semiconductor barrier layer and a first compound semiconductor cap layer are disposed in sequence on the substrate and located in the active element region. A gate electrode is disposed on the first comp...