ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,699, issued on July 8, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Sensing amplifier circuit and memory device" was invented by Po-Yuan Tang (Hsinchu, Taiwan), Chih-Chuan Ke (New Taipei, Taiwan), Jian-Yuan Hsiao (Hsinchu, Taiwan) and Yi-Ling Hung (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A sensing amplifier circuit includes first and second P-type transistors and first and second N-type transistors. The first P-type transistor includes a gate coupled to an input node, a source and a bulk coupled to a first node, and a drain coupled to an output node. The second P-type transistor includes a gate...