US Patent Issued to Vanguard International Semiconductor on Jan. 20 for "Semiconductor device with a deep trench isolation structure and buried layers for reducing substrate leakage current and avoiding latch-up effect, and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,537, issued on Jan. 20, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor device with a deep trench isolation structure and buried layers for reducing substrate leakage current and avoiding latch-up effect, and fabrication method thereof" was invented by Chih-Cherng Liao (Hsinchu, Taiwan), Chung-Ren Lao (Taichung, Taiwan), Hsing-Chao Liu (Hsinchu County, Taiwan), Chun-Wei Li (Taipei, Taiwan) and Hsueh-Chun Liao (Keelung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first buried layer and a second buried layer both have a first conductivity type and are disposed in ...