US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Dec. 9 for "Semiconductor structure and electrostatic discharge protection device" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,617, issued on Dec. 9, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor structure and electrostatic discharge protection device" was invented by Yeh-Ning Jou (Hsinchu, Taiwan), Chih-Hsuan Lin (Hsinchu, Taiwan), Wen-Hsin Lin (Zhubei, Taiwan), Hwa-Chyi Chiou (Hsinchu, Taiwan) and Kai-Chieh Hsu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure including a substrate, a first well, a first doped region, a second doped region, a third doped region, a second well, a fourth doped region, and a fifth doped region is provided. The substrate has a first conductivity type. The fi...