US Patent Issued to Vanguard International Semiconductor on Dec. 9 for "Semiconductor device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,562, issued on Dec. 9, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).

"Semiconductor device and fabrication method thereof" was invented by Chen-Dong Tzou (Taipei, Taiwan), Chih-Cherng Liao (Hsinchu, Taiwan) and Chia-Hao Lee (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a trench disposed in an epitaxial layer on a substrate. A gate structure is disposed in the trench and includes upper and lower conductive portions. A dielectric isolation portion is disposed between the upper and lower conductive portions. A dielectric liner is disposed in the trench and has an op...