US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Dec. 30 for "Semiconductor device and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,941, issued on Dec. 30, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Yu-Hao Ho (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method for forming the same are provided. The semiconductor device includes a semiconductor substrate, a well region, an isolation structure, a gate structure and a field doped region. The well region having a first conductivity type is disposed in the semiconductor substrate. The gate structure extends to cover a portion of the isolation structure in the well region. The field ...