ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,924, issued on Dec. 30, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Chung-Ren Lao (Taichung, Taiwan), Hsiao-Ying Yang (Taichung, Taiwan), Hsing-Chao Liu (Zhudong Township, Taiwan) and Ching-Chung Chen (Magong, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a first deep well region, at least two second well regions, at least one isolation structure and an implantation region. The first deep well region is disposed in the semiconductor substrate, wherein the first deep well reg...