US Patent Issued to VANGUARD INTERNATIONAL SEMICONDUCTOR on Dec. 16 for "Semiconductor structure with a gate and a shielding structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,717, issued on Dec. 16, was assigned to VANGUARD INTERNATIONAL SEMICONDUCTOR Corp. (Hsinchu, Taiwan).

"Semiconductor structure with a gate and a shielding structure" was invented by Hsien-Feng Liao (Taichung, Taiwan), Jian-Hsing Lee (Hsinchu, Taiwan), Chieh-Yao Chuang (Kaohsiung, Taiwan), Ting-Yu Chang (Zhubei, Taiwan), Yeh-Ning Jou (Hsinchu, Taiwan), Shao-Chang Huang (Hsinchu, Taiwan), Kan-Sen Chen (Zhubei, Taiwan), Nai-Lun Cheng (Zhubei, Taiwan), Ching-Yi Hsu (Hsinchu, Taiwan) and Yu-Chen Wu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure is provided. At least one first well region is disposed in a semi...