ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,267, issued on Aug. 19, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Jian-Hsing Lee (Hsinchu, Taiwan), Yeh-Jen Huang (Hsinchu, Taiwan), Li-Yang Hong (Taoyuan, Taiwan) and Yu-Hao Ho (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate electrode disposed on a substrate. A source region and a drain region are disposed in the substrate and located on two sides of the gate electrode respectively. The drain region includes a plurality of drain segments that are laterally separated from each other. These drain segments have a first cond...