ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,455, issued on April 15, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan).
"Semiconductor device and method of fabricating the same" was invented by Syed-Sarwar Imam (Bihar, India), Chih-Cherng Liao (Hsinchu, Taiwan) and Chia-Hao Lee (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an epitaxial layer, at least one gate trench, and at least one trench gate structure. The gate trench includes a lower gate trench and an upper gate trench, and a width of the lower gate trench is less than a width of the upper gate trench. The trench gate structure is disposed in the gate tr...