ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,537,365, issued on Jan. 27, was assigned to Ushio Denki K.K. (Tokyo).
"Multi-beam semiconductor laser device and method of manufacturing the same" was invented by Tadashi Okumura (Tokyo) and Shigeta Sakai (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "An edge-emitting multi-beam semiconductor laser device includes a layered structure including a substrate, an n-type cladding layer, a light-emitting layer, and a p-type cladding layer. The layered structure has m regions (mless than=2) that are adjacent in a first direction, and a sum of a height of the substrate and a height of the first conductive cladding layer is different in each of the m regi...