ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,313, issued on April 22, was assigned to UNTETHER AI Corp. (Toronto).
"Low-power static random access memory" was invented by Katsuyuki Sato (Tokyo) and William Martin Snelgrove (Toronto).
According to the abstract* released by the U.S. Patent & Trademark Office: "A low-power static random access memory (SRAM) is set forth which includes a cache memory function without requiring a special bit cell, and which realizes robust read and write operation without any write assist circuit at 16 nm or below FinFET technology. The SRAM comprises a half-Vdd precharge 6 T SRAM cell array for robust operation at low supply voltage at 16 nm or below, and with cacheable dynamic flip-flop based d...