US Patent Issued to UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA on Aug. 26 for "Fixed-position defect doping method for micro-nanostructure, and NV center sensor" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,398,454, issued on Aug. 26, was assigned to UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (Hefei, China).

"Fixed-position defect doping method for micro-nanostructure, and NV center sensor" was invented by Mengqi Wang (Hefei, China), Ya Wang (Hefei, China), Haoyu Sun (Hefei, China), Xiangyu Ye (Hefei, China), Pei Yu (Hefei, China), Hangyu Liu (Hefei, China), Pengfei Wang (Hefei, China), Fazhan Shi (Hefei, China) and Jiangfeng Du (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming ...