ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,558, issued on June 24, was assigned to University of Electronic Science and Technology of China (Chengdu, China).

"Split gate CSTBT with current clamping PMOS and manufacturing method thereof" was invented by Jinping Zhang (Chengdu, China), Yuanyuan Tu (Chengdu, China), Rongrong Zhu (Chengdu, China), Zehong Li (Chengdu, China) and Bo Zhang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A split gate carrier stored trench bipolar transistor (CSTBT) with current clamping PMOS include a P-type buried layer and a split gate electrode with equal potential to an emitter metal on the basis of the traditional CSTBT, which effectively elimina...