US Patent Issued to University of Electronic Science and Technology of China on June 10 for "Bidirectional conduction trench gate power MOS device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,901, issued on June 10, was assigned to University of Electronic Science and Technology of China (Chengdu, China).

"Bidirectional conduction trench gate power MOS device and manufacturing method thereof" was invented by Ming Qiao (Chengdu, China), Yong Chen (Chengdu, China), Wenliang Liu (Chengdu, China), Dong Fang (Chengdu, China), Fabei Zhang (Chengdu, China) and Bo Zhang (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize...