US Patent Issued to University of Electronic Science and Technology of China on Dec. 2 for "Variable selective etching technology for thick SOI devices" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,987, issued on Dec. 2, was assigned to University of Electronic Science and Technology of China (Chengdu, China).

"Variable selective etching technology for thick SOI devices" was invented by Bo Zhang (Chengdu, China), Teng Liu (Chengdu, China), Wentong Zhang (Chengdu, China), Nailong He (Chengdu, China), Sen Zhang (Chengdu, China), Ming Qiao (Chengdu, China) and Zhaoji Li (Chengdu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A new variable selective etching technology for thick SOI devices. An SOI material is etched by the following steps: (1) providing an SOI wafer; (2) depositing a composite hard mask with a variable selection ratio to re...