US Patent Issued to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY on Sept. 16 for "Janus transition metal dichalcogenide thin film and method of fabricating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,078, issued on Sept. 16, was assigned to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (Yongin-si, South Korea).

"Janus transition metal dichalcogenide thin film and method of fabricating the same" was invented by Suk Ho Choi (Suwon-si, South Korea), Chan Wook Jang (Yongin-si, South Korea) and Won Jun Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of fabricating a Janus transition metal dichalcogenide thin film. More particularly, the method includes a first step of depositing a transition metal dichalcogenide thin film including a first chalcogen element on an oxide silicon substrate; a...