US Patent Issued to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY on Oct. 14 for "Method for manufacturing oxide semiconductor thin film transistor" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,245, issued on Oct. 14, was assigned to UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY (Yongin-si, South Korea).

"Method for manufacturing oxide semiconductor thin film transistor" was invented by Jin Jang (Seoul, South Korea) and Su Hui Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of fabricating an oxide semiconductor thin-film transistor, the method including a step of forming an oxide semiconductor layer including a channel region, a source region, and a drain region on a substrate; a step of forming a gate insulating layer on the channel region; a step of forming a gate electrode on ...