ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,039, issued on Oct. 14, was assigned to UNITY SEMICONDUCTOR (Montbonnot-Saint-Martin, France).
"Method and a system for characterising structures through a substrate" was invented by Wolfgang Alexander Iff (Domene, France) and Alain Courteville (Congenies, France).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for characterizing structures etched in a substrate, such as a wafer is disclosed. A bottom of the structure is embedded in the substrate, the substrate having a top side in which the structures are etched and a bottom side opposite to the top side. The method includes the following steps: illuminating the bottom of at least one struct...