US Patent Issued to UNITED SILICON CARBIDE on June 17 for "Voltage-source gate drive having shunt capacitors and shunt resistors" (New Jersey Inventor)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,917, issued on June 17, was assigned to UNITED SILICON CARBIDE INC. (Scottsdale, Ariz.).

"Voltage-source gate drive having shunt capacitors and shunt resistors" was invented by Ke Zhu (Princeton, N.J.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a device that decouples switching speed and gate delay time using an improved voltage-source gate driver. A shunt capacitor and a shunt resistor are connected in series to parallel across gate resistors of a voltage-source gate driver. The shunt capacitor and shunt resistor allow the gate delay and switching speed effect of the gate resistors to be decoupled. The shunt capacitor provides an in...