US Patent Issued to United Semiconductor Japan on May 27 for "Mask structure for deposition device, deposition device, and operation method thereof" (Japanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,312,671, issued on May 27, was assigned to United Semiconductor Japan Co. Ltd. (Kuwana, Japan).

"Mask structure for deposition device, deposition device, and operation method thereof" was invented by Satoshi Inagaki (Kuwana, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A mask structure for a deposition device includes first segments and second segments. The first segments are arranged in a direction surrounding a central axis and separated from one another. The second segments are disposed above the first segments. Each of the second segments overlaps two of the first segments adjacent to each other in a vertical direction parallel to an extendi...