US Patent Issued to United Semiconductor Japan on Dec. 9 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,608, issued on Dec. 9, was assigned to United Semiconductor Japan Co. Ltd. (Kuwana, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Narumi Ohkawa (Kuwana, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device having a transistor with fin structure includes a channel layer that is disposed over a substrate and is connected to the substrate via a semiconductor layer, a source layer that is disposed on a first side surface of the channel layer over the substrate and is separated from the substrate via a first insulating layer, a drain layer that is disposed on a second side surface of...