US Patent Issued to United Semiconductor Japan on Aug. 26 for "Method for manufacturing semiconductor device with deeply depleted channel" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,371, issued on Aug. 26, was assigned to United Semiconductor Japan Co. Ltd. (Kuwana, Japan).

"Method for manufacturing semiconductor device with deeply depleted channel" was invented by Fumitaka Ohno (Kuwana, Japan) and Makoto Yasuda (Kuwana, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate structure, a source region, a drain region, a doped region, and a channel region. The gate structure is disposed in the substrate, and the source region and drain regions being a first conductivity type respectively disposed at two sides of the gate structure. The doped region being a second conductivity typ...