US Patent Issued to United Semiconductor (Xiamen) on Sept. 30 for "Method for forming an epitaxial layer with better quality" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,997, issued on Sept. 30, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Fujian, China).

"Method for forming an epitaxial layer with better quality" was invented by Yong Xie (Shamen, China), Qiang Gao (Shamen, China), Shih-Hsien Huang (Kaohsiung, Taiwan) and Wen Yi Tan (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor manufacturing method includes providing a substrate, forming a silicon germanium epitaxial layer in the substrate, forming a first silicon layer on the silicon germanium epitaxial layer, wherein the first silicon layer is a pure silicon layer, and forming a second silicon layer on the first silicon ...