US Patent Issued to United Semiconductor (Xiamen) on July 8 for "Semiconductor device and method for fabricating the same" (Taiwanese, Chinese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,677, issued on July 8, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Fujian, China).

"Semiconductor device and method for fabricating the same" was invented by Shih-Hsien Huang (Kaohsiung, Taiwan), Sheng-Hsu Liu (Changhua County, Taiwan) and Wen Yi Tan (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of first forming a gate structure on a substrate, forming a spacer adjacent to the gate structure, forming a recess adjacent to the spacer, trimming part of the spacer, and then forming an epitaxial layer in the recess. Preferably, the semiconductor device includes a ...