US Patent Issued to United Semiconductor (Xiamen) on Jan. 28 for "Resistive random access memory and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,391, issued on Jan. 28, was assigned to United Semiconductor (Xiamen) Co. Ltd. (Fujian, China).

"Resistive random access memory and method of forming the same" was invented by Dejin Kong (Fujian, China), Jinjian Ouyang (Fujian, China), Xiang Bo Kong (Fujian, China) and Wen Yi Tan (Fujian, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive random access memory includes a first dielectric layer, a bottom electrode on the first dielectric layer, a variable-resistance layer on the bottom electrode and having a U-shaped cross-sectional profile, a top electrode on the variable-resistance layer and filling a recess in the variable-resistance ...