ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,481, issued on Sept. 9, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Semiconductor device and method for fabricating the same" was invented by Jia-Rong Wu (Kaohsiung, Taiwan), Chi-Hsuan Cheng (Kaohsiung, Taiwan), Rai-Min Huang (Taipei, Taiwan) and Po-Kai Hsu (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a first spin orbit torque (SOT) layer on the MTJ, forming an inter-metal dielectric (IMD) layer around the first SOT layer, forming a second SOT layer on the IMD layer, f...