ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,294, issued on Sept. 9, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Memory device" was invented by Liang Yi (Singapore) and Chi Ren (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a semiconductor substrate, isolation structures, an erase gate, and floating gates. The isolation structures are disposed in the semiconductor substrate. Active regions separated from one another are defined in the semiconductor substrate by the isolation structures, and each of the active regions is elongated in a first direction. The erase gate is disposed on the semiconductor substrate and elongated in a second ...