US Patent Issued to UNITED MICROELECTRONICS on Sept. 30 for "MIM capacitor structure and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,946, issued on Sept. 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"MIM capacitor structure and fabricating method of the same" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Bin-Siang Tsai (Changhua County, Taiwan), Fu-Yu Tsai (Tainan, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MIM capacitor structure includes numerous inter-metal dielectrics. A trench is embedded within the inter-metal dielectrics. A capacitor is disposed within the trench. The capacitor includes a first electrode layer, a capacitor dielectric layer and a second electrode layer. The first electrode layer, t...