ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,042, issued on Sept. 30, was assigned to UNITED MICROELECTRONICS Corp. (Hsinchu, Taiwan).
"Image sensor structure and manufacturing method thereof" was invented by Zhaoyao Zhan (Singapore), Jing Feng (Singapore), Xiaohong Jiang (Singapore) and Ching Hwa Tey (Singapore).
According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor structure includes a semiconductor substrate; an interconnection layer on the semiconductor substrate; nano-pillar structures, each including a first doped layer, a second doped layer and a third doped layer stacked in sequence; conductive structures, respectively electrically connected to the first doped layer and the int...