US Patent Issued to UNITED MICROELECTRONICS on Sept. 30 for "III-V compound semiconductor field-effect transistor gate structure comprising a field plate with curved sidewalls and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,952, issued on Sept. 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"III-V compound semiconductor field-effect transistor gate structure comprising a field plate with curved sidewalls and manufacturing method thereof" was invented by Chih-Tung Yeh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a III-V compound semiconductor layer, a gate structure, a drain structure, and a field plate. The III-V compound semiconductor layer is disposed on the substrate. The gate structure, the drain structure, and the field plate are disposed above the III-V compound semiconductor ...