ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,995, issued on Sept. 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Compound semiconductor device and fabrication method thereof" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Fu-Yu Tsai (Tainan, Taiwan), Bin-Siang Tsai (Changhua County, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A compound semiconductor device includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a passivation layer on the barrier layer, and a contact area recessed into the passivation layer and the barrier layer. The channel layer is partially exposed at a bottom of the...