US Patent Issued to UNITED MICROELECTRONICS on Sept. 23 for "Transistor structure with air gap and method of fabricating the same" (Singaporean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,487, issued on Sept. 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Transistor structure with air gap and method of fabricating the same" was invented by Yunfei Li (Singapore), Ji Feng (Singapore), Guohai Zhang (Singapore) and Ching Hwa Tey (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on...